GaN HEMT
HEMT devices are three-terminal voltage-controlled devices with three electrodes: the gate, source, and drain. The gate is typically a Schottky contact electrode, while the source and drain are Ohmic contact electrodes. By adjusting the applied gate voltage relative to the source, you can control the density of the two-dimensional electron gas (2DEG) in the channel, thereby controlling the drain current (output current) based on the gate voltage and drain voltage.
More message to us: sales@plutochip.com
Call Us
+86 139 0289 5147
+86 159 8906 6199
Our Email
sales@plutochip.comOur Address
Head Office：1814/1815, Building 3, Yiyun Land Centre, No. 26 Guilan North Rd, Nanhai District, Foshan City, Guangdong Province, China Factory：Wanma Industries Park, Gaoming District, Foshan City, Guangdong Province, China
